Apart from crystal quality, problems with the interface of SiC with silicon dioxide have hampered the development of SiC-based power MOSFETs and insulated-gate bipolar transistors. A person of such specific properties is that gate oxides in SiC-based power devices are typically characterized by a relatively large number of interface states, https://www.facebook.com/permalink.php?story_fbid=pfbid0XCoAmB3YxUyYH1ZgbMmeT1UD412oN5SCiaH3icApCTbHUPpxph3pSLpTYiNaou5Gl&id=61562415773754&__cft__[0]=AZUZnWm-5_LaeZLgoUSJ6OdwTUBoAeV5ZGhyyo_pcT8Y2ciNGkEb7aB-tYl3TR_qOy2k7XP9wP-TXDwbeCPuBRLPb5i8Hi2yCVsL9I5DnH_D159R2ypfQ4Gv2lXHWrg-9EKaZUJBYcP5XbS8XfJAX0YHa4n31eYgaAl3Ju0QWFIGmHvvfcCUa0DPPrvCcA4SU0rLKTA0oIV1XP635km24GXV&__tn__=%2CO%2CP-R