Apart from crystal quality, problems with the interface of SiC with silicon dioxide have hampered the development of SiC-based power MOSFETs and insulated-gate bipolar transistors. This is possible because they have a larger band width, enabling them to convert electricity with fewer heat loss. A silicon semiconductor would have for https://www.facebook.com/permalink.php?story_fbid=pfbid02jiwHc8rb8XoM8PPo4GYNg1DhJRpQiYL4ynt8NSxtnaEM33zEdPnXuYULBuWpacFhl&id=61560512640678&__cft__[0]=AZUDgS4LVgUAPgfPPyifPFicKB29cou-l2QgrxFSEfMO6390aX1FZ4tRGQlEkt1o2keeQ0MgMwKv59O0AhbycmxqjgsXWIAtOdGrLlvncIElf1HpA8EplDL-zYnZt09X8Ri2yikosojqKlygPtKSzFfmiifNigE3GaE4_IB4drUEAuCaWA7U9aaOWKNMw34ro5cyKhsHhXVN-sXs5eln3jhe&__tn__=%2CO%2CP-R